Publication Date

6-2022

Document Type

Article

Organizational Units

Daniel Felix Ritchie School of Engineering and Computer Science, Electrical and Computer Engineering

Keywords

Converter design, Device characterization, High efficiency, Si IGBT, SiC cascode, SiC MOSFET, SiC Schottky diode, Switching losses, Wide bandgap (WBG) technology

Abstract

Semiconductor power devices are the major constituents of any power conversion system. These systems are faced by many circumscriptions due to the operating constraints of silicon (Si) based semiconductors under certain conditions. The emergence and persistence evolution of wide bandgap technology pledge to transcend the restrictions imposed by Si based semiconductors. This paper presents a thorough experimental study and assessment of the performance of three power devices: 1200 V SiC cascode, 1200 V SiC MOSFET, and 1200 V Si IGBT under the same hardware setup. The study aims to capture the major attributes for each power device toward determining their realistic potential applications. The switching performance of each power device is studied and reported. As the gate resistance is a crucial factor in a power device characterization, an extensive analysis of hard-switching losses under different separated turn-on and turnoff gate resistances is also performed and discussed. To appraise the fast switching capability, the switching dv/dts and di/dts are measured and analyzed for each power device. Furthermore, insights are provided about the dependency of switching energy losses on the power device current and blocking voltage. This paper also focuses on evaluating the operations and the performances of these power devices in a hard-switched dc-dc converter topology. While using of 1200 V SiC Schottky diode in the converter design with each power device, the high switching frequency operations and efficiency of the converter are reported and thoroughly explored. The SiC cascode exhibited superior performance when compared to the other two power devices. The results and analyses represent guidelines and prospects for designing advanced power conversion systems.

Publication Statement

This article was originally published as:

Al-Bayati, A. M. S., & Matin, M. A. (2022). Behavior, switching losses, and efficiency enhancement potentials of 1200 V SiC power devices for hard-switched power converters. CPSS Transactions on Power Electronics and Applications, (7)2, 113-129. doi: 10.24295/CPSSTPEA.2022.00011

Copyright is held by CPSS Transactions on Power Electronics and Applications (CPSS TPEA). This article is shared under CPSS TPEA's Open Access statement:

"All articles which are published in CPSS TPEA are permanently free for everyone to read, download and share."

User is responsible for all copyright compliance.

Rights Holder

Ali Mahmoud Salman Al-Bayati, Mohammad Abdul Matin

Provenance

Received from author

File Format

application/pdf

Language

English (eng)

Extent

17 pgs

File Size

4.0 MB

Publication Title

CPSS Transactions on Power Electronics and Applications

Volume

7

First Page

113

Last Page

129

Download



Share

COinS